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http://repositoriodigital.ipn.mx/handle/123456789/9061
Título : | Characterization of a hydrogenated amorphous silicon microbolometer array |
Autor : | Rojas López, Marlon |
Palabras clave : | Hydrogenated amorphous silicon |
Fecha de publicación : | 17-dic-2012 |
Resumen : | We present the characterization of a boron doped hydrogenated amorphous silicon (a-Si:H) thermosensor bolometer array for far infrared detection. The array was fabricated over a silicon wafer on a 0.4 μm silicon-nitride (Si3N4) layer. Wet bulk micromachining was used to create pixels of suspended nitride film by removing the silicon underneath. On this film, a boron doped a-Si:H layer was deposited using a low frequency PECVD system at 540 K. Conventional lithography was used to define the bolometers on the nitride windows, and the 5 x 5 microbolometer array was fabricated and characterized at 77 K. A 1.17 x 10-2 mA/W responsivity, with a temperature coefficient of resistance (TCR) of 4.25%, were obtained. |
Descripción : | Article |
URI : | http://www.repositoriodigital.ipn.mx/handle/123456789/9061 |
Aparece en las colecciones: | Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
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2011_ICO_Puebla_Silicio.pdf | 121.62 kB | Adobe PDF | Visualizar/Abrir |
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