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Campo DC | Valor | Lengua/Idioma |
---|---|---|
dc.contributor.author | Rojas López, Marlon | - |
dc.date.accessioned | 2012-12-17T22:23:33Z | - |
dc.date.available | 2012-12-17T22:23:33Z | - |
dc.date.issued | 2012-12-17 | - |
dc.identifier.uri | http://www.repositoriodigital.ipn.mx/handle/123456789/9061 | - |
dc.description | Article | es |
dc.description.abstract | We present the characterization of a boron doped hydrogenated amorphous silicon (a-Si:H) thermosensor bolometer array for far infrared detection. The array was fabricated over a silicon wafer on a 0.4 μm silicon-nitride (Si3N4) layer. Wet bulk micromachining was used to create pixels of suspended nitride film by removing the silicon underneath. On this film, a boron doped a-Si:H layer was deposited using a low frequency PECVD system at 540 K. Conventional lithography was used to define the bolometers on the nitride windows, and the 5 x 5 microbolometer array was fabricated and characterized at 77 K. A 1.17 x 10-2 mA/W responsivity, with a temperature coefficient of resistance (TCR) of 4.25%, were obtained. | es |
dc.description.sponsorship | Instituto Politécnico Nacional CIBA-Tlaxcala | es |
dc.language.iso | en | es |
dc.subject | Hydrogenated amorphous silicon | es |
dc.title | Characterization of a hydrogenated amorphous silicon microbolometer array | es |
dc.type | Article | es |
dc.description.especialidad | Medico-Biológicas | es |
dc.description.tipo | es | |
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2011_ICO_Puebla_Silicio.pdf | 121.62 kB | Adobe PDF | Visualizar/Abrir |
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