El Instituto Politécnico Nacional
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http://repositoriodigital.ipn.mx/handle/123456789/11601| Título : | ELECTRICAL OPTICAL AND STRUCTURAL CHARACTERIZATION OF AlO2 THIN FILMS PREPARED BY PULSED ULTRASONIC SPRAYED PYROLYSIS |
| Palabras clave : | SPRAY PYROLYSIS ALUMINUM OXIDE |
| Fecha de publicación : | 16-ene-2013 |
| Editorial : | AMERICAN INSTITUTE OF PHYSICS |
| Descripción : | The optical, structural, and electrical characteristics of aluminum oxide thin films deposited by pulsed ultrasonic sprayed pyrolysis are reported. The films are deposited on crystalline silicon at temperatures from 400 to 550°C using a chemical solution of aluminum acetylacetonate, as source of aluminum, and N, N-dimethylformamide, as solvent. A H2O–NH4OH mist is supplied simultaneously during deposition to improve the films’ properties. The results showed that the properties of the as deposited films depended strongly on the number of pulses used and on the substrate temperature. The thickness of the films is under 300 Å and the best films’ properties showed an index of refraction close to 1.6 and a root mean square surface roughness of about 7.5 Å in average. Infrared spectroscopy shows that SiO2 is observed at the interface with silicon of the Al2O3 films and seemed to play, as expected, a dramatic role in the electrical characteristics of the interface. Films with a dielectric constant higher than 8 and an interface trap density at midgap in the 1010 eV−1 cm−2 range are obtained. Films deposited with three pulses and at 550 °C are able to stand an electric field up to 4 MV/cm. |
| URI : | http://www.repositoriodigital.ipn.mx/handle/123456789/11601 |
| Otros identificadores : | http://hdl.handle.net/123456789/1135 |
| Aparece en las colecciones: | Doctorado |
Ficheros en este ítem:
| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| RESUMEN AlO2.docx | 12.46 kB | Microsoft Word XML | Visualizar/Abrir |
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