El Instituto Politécnico Nacional
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http://repositoriodigital.ipn.mx/handle/123456789/11462| Título : | Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy |
| Palabras clave : | MBE GaNAs LAYERS |
| Fecha de publicación : | 16-ene-2013 |
| Editorial : | American Vacuum Society |
| Descripción : | We have grown GaNxAs1−x layers by molecular beam epitaxy on GaAs 100 substrates using a radio frequency plasma nitrogen source and solid sources for Ga and As. Employing reflection high-energy electron diffraction RHEED , the GaNAs growth mode was in situ monitored. A three dimensional 3D growth mode was obtained at the low growth temperature of 420 °C. At higher temperatures streaky RHEED patterns were observed during all the GaNAs deposition, indicating a two dimensional 2D growth mode. The structural and optical properties of the GaNAs layers were studied by employing high-resolution x-ray diffraction, atomic force microscopy, Raman scattering, and spectroscopic ellipsometry. The films grown in a 3D mode presented high density of crystal defects, degraded structural properties, and broad optical transitions. In contrast, GaNAs layers grown in a 2D mode are pseudomorphic with high crystal quality. The properties of samples with
a high N concentration were improved by first growing a GaNAs layer with a low N content. INVESTIGACION INSTITUTO POLITECNICO NACIONAL |
| URI : | http://www.repositoriodigital.ipn.mx/handle/123456789/11462 |
| Otros identificadores : | J. Vac. Sci. Technol. B 24 (3), 1591-1594, 2006 1071-1023 http://hdl.handle.net/123456789/1011 |
| Aparece en las colecciones: | Doctorado |
Ficheros en este ítem:
| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| STRUCTURAL AND OPTICAL CHARACTERIZATION OF GaNAs LAYERS GROWN BY MOLECULAR BEAM EPITAXY.pdf | 34.06 kB | Adobe PDF | Visualizar/Abrir |
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