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http://repositoriodigital.ipn.mx/handle/123456789/11462Registro completo de metadatos
| Campo DC | Valor | Lengua/Idioma |
|---|---|---|
| dc.creator | Pulzara-Mora, A. | - |
| dc.creator | Meléndez-Lira, M. | - |
| dc.creator | Falcony-Guajardo, C. | - |
| dc.creator | López-López, M. | - |
| dc.creator | Vidal, M. A. | - |
| dc.creator | Jiménez-Sandoval, S. | - |
| dc.creator | Aguilar-Frutis, M. A. | - |
| dc.date | 2012-03-29T00:00:51Z | - |
| dc.date | 2012-03-29T00:00:51Z | - |
| dc.date | 2006-05-31 | - |
| dc.date.accessioned | 2013-01-16T15:38:08Z | - |
| dc.date.available | 2013-01-16T15:38:08Z | - |
| dc.date.issued | 2013-01-16 | - |
| dc.identifier | J. Vac. Sci. Technol. B 24 (3), 1591-1594, 2006 | - |
| dc.identifier | 1071-1023 | - |
| dc.identifier | http://hdl.handle.net/123456789/1011 | - |
| dc.identifier.uri | http://www.repositoriodigital.ipn.mx/handle/123456789/11462 | - |
| dc.description | We have grown GaNxAs1−x layers by molecular beam epitaxy on GaAs 100 substrates using a radio frequency plasma nitrogen source and solid sources for Ga and As. Employing reflection high-energy electron diffraction RHEED , the GaNAs growth mode was in situ monitored. A three dimensional 3D growth mode was obtained at the low growth temperature of 420 °C. At higher temperatures streaky RHEED patterns were observed during all the GaNAs deposition, indicating a two dimensional 2D growth mode. The structural and optical properties of the GaNAs layers were studied by employing high-resolution x-ray diffraction, atomic force microscopy, Raman scattering, and spectroscopic ellipsometry. The films grown in a 3D mode presented high density of crystal defects, degraded structural properties, and broad optical transitions. In contrast, GaNAs layers grown in a 2D mode are pseudomorphic with high crystal quality. The properties of samples with a high N concentration were improved by first growing a GaNAs layer with a low N content. | - |
| dc.description | INVESTIGACION | - |
| dc.description | INSTITUTO POLITECNICO NACIONAL | - |
| dc.language | en | - |
| dc.publisher | American Vacuum Society | - |
| dc.subject | MBE | - |
| dc.subject | GaNAs LAYERS | - |
| dc.title | Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy | - |
| dc.type | Article | - |
| Aparece en las colecciones: | Doctorado | |
Ficheros en este ítem:
| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| STRUCTURAL AND OPTICAL CHARACTERIZATION OF GaNAs LAYERS GROWN BY MOLECULAR BEAM EPITAXY.pdf | 34.06 kB | Adobe PDF | Visualizar/Abrir |
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