Physical properties of Bi doped CdTe thin films grown by the CSVT method

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Título :	Physical properties of Bi doped CdTe thin films grown by the CSVT method
Palabras clave :	Thin films Bi doping
Fecha de publicación :	16-ene-2013
Editorial :	Escuela Superior de Fısica y Matematicas, Instituto Politecnico Nacional, 07738 Mexico D. F., Mexico, Centro de Investigacion en Ciencia Aplicada y Tecnologıa Avanzada, Instituto Politenico Nacional, 11500 Mexico, D. F., Mexico, Departamento de Fı´sica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid, Spain
Descripción :	A study of the physical properties of CdTe thin films doped with Bi is presented. CdTe:Bi thin films were deposited by the close space vapor transport (CSVT) technique using powdered CdTe:Bi crystals grown by the vertical Bridgman method. CdTe:Bi crystals were obtained with nominal Bi doping concentrations varying in the 1 1017–8 1018 cm 3 range. The physical properties of CdTe:Bi thin films were studied performing photoluminescence, X-ray, SEM, photoacoustic spectroscopy and resistivity measurements. We observed a decrease of the resistivity values of CdTe:Bi films with the Bi content as low as 6 105O-cm for Bi concentrations of 8 1018 cm 3. These are meaningful results for CdTe-based solar cells. r 2006 Published by Elsevier B.V Instituto Politecnico Nacional CONACYT
URI :	http://www.repositoriodigital.ipn.mx/handle/123456789/11329
Otros identificadores :	http://hdl.handle.net/123456789/851
Aparece en las colecciones:	Doctorado

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