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http://repositoriodigital.ipn.mx/handle/123456789/11329
Título : | Physical properties of Bi doped CdTe thin films grown by the CSVT method |
Palabras clave : | Thin films Bi doping |
Fecha de publicación : | 16-ene-2013 |
Editorial : | Escuela Superior de Fısica y Matematicas, Instituto Politecnico Nacional, 07738 Mexico D. F., Mexico, Centro de Investigacion en Ciencia Aplicada y Tecnologıa Avanzada, Instituto Politenico Nacional, 11500 Mexico, D. F., Mexico, Departamento de Fı´sica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid, Spain |
Descripción : | A study of the physical properties of CdTe thin films doped with Bi is presented. CdTe:Bi thin films
were deposited by the close space vapor transport (CSVT) technique using powdered CdTe:Bi
crystals grown by the vertical Bridgman method. CdTe:Bi crystals were obtained with nominal Bi
doping concentrations varying in the 1 1017–8 1018 cm 3 range. The physical properties of
CdTe:Bi thin films were studied performing photoluminescence, X-ray, SEM, photoacoustic
spectroscopy and resistivity measurements. We observed a decrease of the resistivity values of
CdTe:Bi films with the Bi content as low as 6 105O-cm for Bi concentrations of 8 1018 cm 3.
These are meaningful results for CdTe-based solar cells.
r 2006 Published by Elsevier B.V Instituto Politecnico Nacional CONACYT |
URI : | http://www.repositoriodigital.ipn.mx/handle/123456789/11329 |
Otros identificadores : | http://hdl.handle.net/123456789/851 |
Aparece en las colecciones: | Doctorado |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
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SEMSC_Marin_2006.pdf | 62.67 kB | Adobe PDF | Visualizar/Abrir |
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