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http://repositoriodigital.ipn.mx/handle/123456789/11216
Título : | Transmission Electron Microscopy study of a GaN thin film grown on Al2O3 by MOCVD |
Palabras clave : | thin films Al2O3 |
Fecha de publicación : | 16-ene-2013 |
Editorial : | Instituto Politecnico Nacional |
Descripción : | For this work a structural study of the GaN/Al2O3
heteroepitaxy was carried out by Atomic Force Microscopy
(AFM), Scanning Electron Microscopy (SEM) and
Transmission Electron Microscopy (TEM). A GaN thin film
grown on the c-plane of an Al2O3 substrate by MOCVD was
characterized. The sample was observed by AFM and SEM,
the analysis showed the GaN formed hexagonal-like features
on the surface of the sample. An abrupt interface was
observed in the TEM cross section images. Results showed
GaN with excellent structural properties was grown. Articulo en extenso en memoria de simposio Instituto Politecnico Nacional |
URI : | http://www.repositoriodigital.ipn.mx/handle/123456789/11216 |
Otros identificadores : | 978-607-414-022-4 http://hdl.handle.net/123456789/727 |
Aparece en las colecciones: | Doctorado |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
2sta_p59.pdf | 244.42 kB | Adobe PDF | Visualizar/Abrir |
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