Transmission Electron Microscopy study of a GaN thin film grown on Al2O3 by MOCVD

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Campo DC	Valor	Lengua/Idioma
dc.creator	Guillen-Cervantes, A.	-
dc.creator	Rivera-Alvarez, Z.	-
dc.creator	Lopez-Lopez, M.	-
dc.creator	Ponce-Pedraza, A.	-
dc.creator	Aguilar-Frutis, M. A.	-
dc.creator	Guarneros, C.	-
dc.date	2012-03-28T00:30:53Z	-
dc.date	2012-03-28T00:30:53Z	-
dc.date	2008-12	-
dc.date.accessioned	2013-01-16T13:33:42Z	-
dc.date.available	2013-01-16T13:33:42Z	-
dc.date.issued	2013-01-16	-
dc.identifier	978-607-414-022-4	-
dc.identifier	http://hdl.handle.net/123456789/727	-
dc.identifier.uri	http://www.repositoriodigital.ipn.mx/handle/123456789/11216	-
dc.description	For this work a structural study of the GaN/Al2O3 heteroepitaxy was carried out by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). A GaN thin film grown on the c-plane of an Al2O3 substrate by MOCVD was characterized. The sample was observed by AFM and SEM, the analysis showed the GaN formed hexagonal-like features on the surface of the sample. An abrupt interface was observed in the TEM cross section images. Results showed GaN with excellent structural properties was grown.	-
dc.description	Articulo en extenso en memoria de simposio	-
dc.description	Instituto Politecnico Nacional	-
dc.language	en	-
dc.publisher	Instituto Politecnico Nacional	-
dc.subject	thin films Al2O3	-
dc.title	Transmission Electron Microscopy study of a GaN thin film grown on Al2O3 by MOCVD	-
dc.type	Article	-
Aparece en las colecciones:	Doctorado

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