Influence of hexagonal-shaped surface pits on optical and structural properties of GaN epilayers grown on Al2O3 substrates by MOCVD

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Campo DC	Valor	Lengua/Idioma
dc.creator	Guillen-Cervantes, A.	-
dc.creator	Rivera-Alvarez, Z.	-
dc.creator	Aguilar Frutis, M. A.	-
dc.creator	Falcony, C.	-
dc.creator	Lopez-Lopez, M.	-
dc.date	2012-03-27T00:15:16Z	-
dc.date	2012-03-27T00:15:16Z	-
dc.date	2008-06	-
dc.date.accessioned	2013-01-16T11:28:20Z	-
dc.date.available	2013-01-16T11:28:20Z	-
dc.date.issued	2013-01-16	-
dc.identifier	978-607-414-014-9	-
dc.identifier	http://hdl.handle.net/123456789/481	-
dc.identifier.uri	http://www.repositoriodigital.ipn.mx/handle/123456789/10968	-
dc.description	GaN films grown on (0001) sapphire substrates in a low pressure MOCVD quartz reactor at low temperature (~900 º C), were characterized by atomic force microscopy, secondary electron microscopy, micro-Raman, X-ray diffraction, and ellipsometry both spectral and at fixed wavelength.	-
dc.description	Articulo en extenso en memoria de simposio.	-
dc.description	Instituto Politecnico Nacional	-
dc.language	en	-
dc.publisher	Instituto Politecnico Nacional	-
dc.title	Influence of hexagonal-shaped surface pits on optical and structural properties of GaN epilayers grown on Al2O3 substrates by MOCVD	-
dc.type	Article	-
Aparece en las colecciones:	Doctorado

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