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Título : | Dependence on the atmosphere of preparation of the luminescence of spark processed porous GaAs |
Autor : | Rojas López, Marlon |
Palabras clave : | GaAs |
Fecha de publicación : | 17-dic-2012 |
Resumen : | We report on the preparation of photoluminescent porous GaAs by the application of high voltage spark discharges in atmospheres of pure oxygen, pure nitrogen, and in mixed N2:O2 ratios of 4:1 and 1:4. The spark-processed porous ~spp! samples were characterized by the observation of their visible photoluminescence ~PL! when illuminated with UV monochromatic radiation. Some differences are observed in the initial PL spectra of the spp-GaAs according to the atmosphere of preparation under similar sparking and time conditions. The PL consists of two dominant bands, a yellow-green band between ;2.2 and 2.6 eV and a blue-violet band, centered at 3.1 eV. Comparison with Raman and PL results from As2O3 and As2O5 indicates that the PL in the spp-GaAs is produced by the formation of these compounds by exposure to oxygen during the preparation. This is reinforced by energy dispersive x-ray spectroscopy measurements that indicate that the spp-GaAs is always oxidized, even when prepared under a nitrogen flow. The blue-UV emission at 3.1 eV suggests that we cannot rule out confinement as a contributing mechanism for this PL. Raman spectra indicate that for samples prepared in pure nitrogen, the resulting material consists of amorphous As and GaAs, and the cubic form of As2O3 , arsenolite. PL and Raman indicate that there exists an increasing degree of amorphization of the resultant material with the introduction of nitrogen in the preparation atmosphere. © 2000 American Institute of Physics. |
Descripción : | Article |
URI : | http://www.repositoriodigital.ipn.mx/handle/123456789/9104 |
Aparece en las colecciones: | Artículos |
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Pages_2000_Journal of Applied Physics_GaAs.pdf | 15.27 kB | Adobe PDF | Visualizar/Abrir |
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