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Título : | Physical properties characterization ofW03 films grown by hot-filatnent metal oxide deposition |
Autor : | Delgado Macuil, Raul J. |
Palabras clave : | Compound semiconductors Hot Filament Metal Oxide Deposition Novel Materials and Technological Advances for electrochromics Semiconductors growth W03 semiconductors |
Fecha de publicación : | 27-nov-2012 |
Resumen : | W03 is grown by hot-filament metal oxide deposition (HFMOD) technique under atmospheric pressure and an oxygen atmosphere. By X-ray diffraction obtains thatW03 presents mainly monoclinic crystalline phase. The chemical stoichiometry is obtained by X-ray Photoelectron Spectroscopy (XPS ). The IR spec trum of the as-grown W03 presents broad peaks in the range of 1100 to 3600 cm- 1 • A broad band in the 2200 to 3600cm- 1 region and the peaks sited at 1645 and 1432cm-1 are well resolved, which are originated from moisture and are assigned to v(OH) and o(OH) modes of adsorbed water and the corre sponding tungsten oxide vibrations are in infrared region from 400 to 1453 cm-1 and around 3492 cm-1 , which correspond to tungsten-oxygen ( W-0) stretching, bending and lattice modes. The Raman spec trum shows intense peaks at 801,710,262 and 61 cm-1 that are typical Raman peaks of crystalline W03 (m-phase) that correspond to stretching vibrations of the bridging oxygen, which are assigned to W-0 stretching (v) and W-0 bending (o) modes, respectively. By transmittance measurements obtains that the W03 band gap can be varied from 2.92 to 3.13 eV in the investigated annealing temperature range. |
Descripción : | article |
URI : | http://www.repositoriodigital.ipn.mx/handle/123456789/8608 |
Aparece en las colecciones: | Artículos |
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Fichero | Descripción | Tamaño | Formato | |
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2010_MSEB_WO3.pdf | 866.25 kB | Adobe PDF | Visualizar/Abrir |
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