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Título : | Morphological transformation and kinetic analysis in the aluminum-mediated a-Si:H crystallization |
Autor : | DELGADO MACUIL, RAÚL JACOBO |
Palabras clave : | crystallization |
Fecha de publicación : | 23-nov-2012 |
Resumen : | We analyzed the amorphous–crystalline morphological transformation of a-Si:H films caused by applying an annealing treatment to the Al/a-Si:H system at low temperature (250 C) during several hours. Optical micrographs show the growth of Si nuclei formed on the amorphous matrix and also a t2 dependence of the average area of these crystalline grains, which suggest a bidimensional growth. Also was investigated the growth kinetics in the lc-Si:H films considering the annealing time dependence of the crystalline fraction. The application of the Avrami equation showed a good description of the experimental results during this morphological and structural transformation. The low growth velocity measured Vg = 7.2 · 10 3 lm/min is a direct consequence of the low annealing temperature applied (250 C), which reduces the silicon diffusion across the interface Al/a-Si:H. Infrared reflectance measurements show a relative diminishing of the intensity for Si–H wagging mode with annealing time, suggesting effusion of hydrogen to the surface of the lc-Si:H films. 2005 Elsevier B.V. All rights reserved. |
Descripción : | Artículo |
URI : | http://www.repositoriodigital.ipn.mx/handle/123456789/8483 |
Aparece en las colecciones: | Artículos |
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2006_Journal_of_noncristalline_solids_morphological_transformation.pdf | 72.49 kB | Adobe PDF | Visualizar/Abrir |
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