Síntesis de Nano-alambres de GaN Vía MOCVD

Abstract

In this research work has been proposed the synthesis of Gallium Nitride Nan-owires, which is a semiconductor that has gained much importance in recent years due to its properties that allow it to be used in high performance applications, for example in the manufacture of MESFET´s y HEMT´s. The MOCVD fabrication method has been used, which has several advantages as the use of low-temperature decomposition metal precursors. The use of GaCl3 in solid state as Gallium precursor has been proposed and has been transported in vapor phase, the Azidotrimethylsilane has been used, which has never been reported in this type of synthesis, as Nitrogen precursor and also has the advantage of not being explosive, as currently used precursors. The temperature and flow of precursors have been established in the proper rela-tion in the MOCVD, at atmospheric pressure, the above was possible partly due to improvements made to the equipment in order to have conditions that would allow homogeneity in the process of growth. The technique of scanning electron microscopy has been used to determine the diameter and length of the nanowires obtained, which have a diameter of 100 na-nometers and lengths less than one micrometer. Finally, the technique of X-ray diffraction has been used to determine the crystal structure of the nanowires.