Obtenci on de contactos de tipo CuxTe en celdas solares de CdT e mediante ataques qu micos de acidos n trico-fosf orico y evaporaci on de Cu

Abstract

This thesis evaluates the acquisition of back contact type CuxTe to solar cell of CdS=CdT e by chemical etching N=P to Cd lms with a post-heat treatment. Chemical attack consisted of a combination of nitric and phosphoric acid this combination is known in the literature as N=P. Two solutions were prepared with di erent concentrations of nitric and were used at di erent times of attacks with these solutions. Cu lms with di erent thicknesses were deposited on the surfece entiched with Te, by thermal evaporation under vacuum. Heat treatment is aimed at a spread of cu inside the region p+ to create a link to the te and form compound is achieved CuxTe. These processes have obtained the phase x = 1;4, this phase is reported as the most stable as back contact for CdT e solar cells CdS=CdT e. Subsequent contacts to be ohmic created so the ohmic approach is central to this characterization, we also studied the in uence of the Cu in the barrier of the grain by measuring I 􀀀 T, to discern which of the following is the contact create better metal-semicontudctor contact resistence we measure by TLM techniques, the most importante of these contacts is the phase thes created will use the x-ray techniques for identi cation. It is important to note that prior to this work we study the optimum parameters for region p+. Were manufactured solar cells for CdS=CdT e where the only di erence is the back-contact Cu=Au and Cu1;4Te where the rst gives an e ciency of 1;2% and the second 2;6 %. So you have improvements to use the contact Cu1;4Te.