El Instituto Politécnico Nacional
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http://repositoriodigital.ipn.mx/handle/123456789/11633| Título : | Low interface states and high dielectric constant Y2O3 films on Si substrates |
| Palabras clave : | Y2O3 THIN FILMS SPRAY PYROLYSIS |
| Fecha de publicación : | 16-ene-2013 |
| Editorial : | American Vacuum Society |
| Descripción : | Y2O3 films were deposited on c-Si substrates at temperatures in the 400–550 °C range, with no further thermal treatment given to these samples, using the spray pyrolysis technique. The spraying solution was yttrium acetilacetonate disolved N,N-dimethylformamide. In addition, a solution of
H2O–NH4OH was sprayed in parallel during the deposition process to improve the optical,
structural, and electrical properties of the deposited films. The growth of a SiO2 layer between the yttrium oxide and the Si substrate during this deposition process resulted in interface state density
values as low as 1010 eV−1 cm−2. An effective refractive index value of 1.86, and deposition rates
close to 1 Å/ s were obtained. The Y2O3 films were polycrystalline with a crystalline cubic phase highly textured with the 400 direction normal to the Si surface. An effective dielectric constant up
to 13, as well as a dielectric strength of the order of 0.2 MV/cm was obtained for 1000 Å thick as-deposited films incorporated in a metal-oxide-semiconductor structure. INVESTIGACION INSTITUTO POLITECNICO NACIONAL |
| URI : | http://www.repositoriodigital.ipn.mx/handle/123456789/11633 |
| Otros identificadores : | J. Vac. Sci. Technol. B 24 (4) Jul/Aug 2006 1071-1023 http://hdl.handle.net/123456789/1159 |
| Aparece en las colecciones: | Doctorado |
Ficheros en este ítem:
| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| LOW INTERFACE AND HIGH DIELECTRIC CONSTANT Y203 FILMS ON Si SUBSTRATES.pdf | 35.15 kB | Adobe PDF | Visualizar/Abrir |
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