El Instituto Politécnico Nacional
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http://repositoriodigital.ipn.mx/handle/123456789/11407| Título : | Study of optical properties of GaAsN layers preparedby molecular beam epitaxy |
| Palabras clave : | Optical properties III–V–N semiconductors MBE |
| Fecha de publicación : | 16-ene-2013 |
| Editorial : | ELSEVIER |
| Descripción : | We have grown GaAsN layers (with nitrogen concentration between 1.2% and 3.2%) on GaAs(1 0 0) substrates by molecular beam
epitaxy (MBE) using a radio frequency (RF) plasma nitrogen source, and solid sources for Ga and As. The growth temperature was
varied from 420 to 600 1C, and the GaAsN growth mode was in situ monitored by reflection high-energy electron diffraction (RHEED).
The optical properties of the layers were studied by photoreflectance spectroscopy (PR) and phase modulated ellipsometry (PME). For
the growth temperature of 420 1C the films grew in a three-dimensional (3D) mode as indicated by the appearance of transmission spots
in the RHEED patterns. In contrast, GaAsN layers grown at higher temperatures presented a two-dimensional (2D) growth mode. These
GaAsN layers are pseudomorphic according to high-resolution X-ray diffraction (HRXRD). The PR spectra of all samples exhibited
Franz–Keldysh oscillations (FKO) above of the GaAs band gap energy. From these oscillations we obtained the built-in internal electric
field intensity (Fint) at the GaAsN/GaAs interface. In the low-energy region of the PR spectra we observed the transitions associated to
fundamental band gap of the GaAsN layers. The variation of the GaAsN fundamental band gap obtained by PR as a function of the N
content was explained according the band anti-crossing model (BAC). On the other hand, the E1 and E1+DE1 critical points were
obtained from the analysis of spectra of the imaginary part of the dielectric function obtained by PME. We observed a shift of these
critical points to higher energies with the increase of N content, which was explained by a combination of strain and alloying effects. INVESTIGACION INSTITUTO POLITECNICO NACIONAL |
| URI : | http://www.repositoriodigital.ipn.mx/handle/123456789/11407 |
| Otros identificadores : | Journal of Crystal Growth 301–302 (2007) 565–569 0022-0248 http://hdl.handle.net/123456789/916 |
| Aparece en las colecciones: | Doctorado |
Ficheros en este ítem:
| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| STUDY OF OPTICAL PROPERTIES OF GaAsN LAYERS.pdf | 83.62 kB | Adobe PDF | Visualizar/Abrir |
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