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http://repositoriodigital.ipn.mx/handle/123456789/10605| Título : | A PRACTICAL MODEL FOR THE DETERMINATION OF TRANSPORT PARAMETERS IN SEMICONDUCTORS |
| Palabras clave : | PHOTOACOUSTIC TECHNIQUE SEMICONDUCTOR THERMAL DIFFUSIVITY TRANSPORT PARAMETERS |
| Fecha de publicación : | 16-ene-2013 |
| Descripción : | In this paper a new and practical model for the
determination of transport parameters of crystalline semiconductors,
by means of the photoacoustic technique is
reported. The model is based on the calculation of the
photoacoustic signal for the so-called heat transmission
configuration, and considers that the thermal response to
periodical heating, due to light absorption, in semiconductor
materials has mainly two contributions: (a) the
vibrations of the crystal lattice (phonon contribution) and
(b) the diffusion and recombination (bulk and superficial)
of the photogenerated charge carriers. Considering these
contributions as the heat sources, and using unmixed Dirichlet
and Neumann boundary conditions, the solution of
the heat diffusion equation, necessary for the calculation
of the photoacoustic signal is obtained. In addition, an
expression—describing a particular transport regime—that
can be used as practical fitting function, for the more
available experimental conditions, is developed. Finally,
values of transport parameters for silicon wafers are
obtained by fitting this model to the experimental data,
showing a good agreement with the values quoted in
literature. CONACYT,SIP-IPN,COFAA-IPN |
| URI : | http://www.repositoriodigital.ipn.mx/handle/123456789/10605 |
| Otros identificadores : | 0022-2461 http://hdl.handle.net/123456789/68 |
| Aparece en las colecciones: | Doctorado |
Ficheros en este ítem:
| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| Apractical model for the determination of transport parameters in semiconductors.pdf | 36.56 kB | Adobe PDF | Visualizar/Abrir |
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