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Raman scattering from fully strained Ge1 -xSnx (x 0.22) alloys grown on Ge(001) 2 x 1 by low-temperature molecular beam epitaxy 875

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Raman scattering from fully strained Ge1 -xSnx (x 0.22) alloys grown on Ge(001) 2 x 1 by low-temperature molecular beam epitaxy 5 0 3 14 21 6 0

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Pages_1998_Journal of Applied Physics_GeSn.pdf 394

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