Optical and Structural Characterization of ZnO Films Deposited by Chemical Bath and Activated by means of Microwaves

Abstract

Abstract. Zinc oxide (ZnO) is a direct, wide band gap semiconductor material having many promising properties for UV/blue optoelectronics, transparent electronics, spintronic devices and sensor applications. The ZnO is synthesized by the technique of Chemical Bath Deposition by microwaves heating (MW-CBD). The urea concentration in the solution is varied, maintaining constant the zinc nitrate in ratio 1:1 ... 1:10. The physical properties of ZnO thin films were examined by X-ray diffraction (XRD), SEM-EDS, and Raman scattering, which are convenient tools that can provide us with plenty of information about crystal structure and elementary excitons. By X-rays one obtains that it has hexagonal po1ycrystalline wurtzite type structure. The IR absorpt i on line at 3577 cm•1 detected at 300 K in bath chemical ZnO is assigned an 0-H bond primarily aligned with the c-axis ofthe crystal and bonding between Zn-0 (473cm- 1 , 532 cm- 1 ). The Raman spectra show the first order experimental Raman spectra of ZnO excited by 514.5 nm laser line. The first order Raman modes A 1T' E 1 T' E/H), A 1 Land E 1 L are identified as the peaks sited at 385, 426, 437, 572 and 584 cm•1