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http://repositoriodigital.ipn.mx/handle/123456789/11623
Título : | Study of the physical properties of Bi doped CdTe thin films deposited by close space vapour transport |
Palabras clave : | Close space vapour transport Cadmium telluride |
Fecha de publicación : | 16-ene-2013 |
Editorial : | ELSEVIER |
Descripción : | Bi doped cadmium telluride (CdTe:Bi) thin films were grown on glass-substrates by the close space vapour transport method. CdTe:Bi crystals
grown by the vertical Bridgman method, varying the nominal Bi concentration in the range between 1×1017 and 8×1018 cm−3, were used in
powder form for CdTe:Bi thin film deposition. Dark conductivity and photoconductivity measurements in the 90–300 K temperature range and
determination by photoacoustic spectroscopy of the optical-absorption coefficient of the films in the 1.0 to 2.4 eV spectral region were carried out.
The influence of Bi doping levels upon the intergrain barrier height and other associated grain boundary parameters of the polycrystalline CdTe:Bi
thin films were determined from electrical, optical and morphological characterization.
© 2007 Elsevier B.V. All rights reserved Instituto politecnico Nacional CONACYT |
URI : | http://www.repositoriodigital.ipn.mx/handle/123456789/11623 |
Otros identificadores : | http://hdl.handle.net/123456789/1157 |
Aparece en las colecciones: | Doctorado |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
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TSF_Marin_2008.pdf | 90.29 kB | Adobe PDF | Visualizar/Abrir |
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