El Instituto Politécnico Nacional
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http://repositoriodigital.ipn.mx/handle/123456789/10828| Título : | Internal electric-field and segregation effects on luminescence properties |
| Palabras clave : | Quantum wells Luminescence |
| Fecha de publicación : | 16-ene-2013 |
| Editorial : | Journal of Applied Physics |
| Descripción : | Surface segregation of In atoms during molecular-beam epitaxy and its influence on the energy
levels in strained piezoelectric InGaAs/GaAs and InGaN/GaN quantum wells QWs are
investigated theoretically. It is shown that these effects modify the electronic states in the QW and
the emission energy in the photoluminescence PL spectra. In this work, we solve analytically the
Schrödinger equation in the absence of electric field, taking into account the shape changes in the
QWs due to the segregation of In atoms during the growth process of the semiconductor
heterostructures. Furthermore, the influence of the built-in electric field due to the piezoelectric
effect on the PL emission is calculated by considering a variational electron wave function to
calculate the ground-energy transitions inside the active region in the heterostructure. In particular,
we apply this model to the case of indium segregation in InGaAs/GaAs for moderate internal
electric fields. The transition energy calculations between the confined electron and hole states as a
function of the well width for different temperatures and In composition are in agreement with the
measured PL energy peaks. Research article of journal indexed in ISI database Instituto Politecnico Nacional and CONACYT-Mexico |
| URI : | http://www.repositoriodigital.ipn.mx/handle/123456789/10828 |
| Otros identificadores : | 0021-8979 http://hdl.handle.net/123456789/334 |
| Aparece en las colecciones: | Doctorado |
Ficheros en este ítem:
| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| 2005 JAP v98 p23501.pdf | 46.09 kB | Adobe PDF | Visualizar/Abrir |
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