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Campo DC | Valor | Lengua/Idioma |
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dc.contributor.author | Diaz Reyes, Joel | - |
dc.date.accessioned | 2012-11-27T17:00:43Z | - |
dc.date.available | 2012-11-27T17:00:43Z | - |
dc.date.issued | 2012-11-27 | - |
dc.identifier.uri | http://www.repositoriodigital.ipn.mx/handle/123456789/8592 | - |
dc.description | article | es |
dc.description.abstract | We present the electrical and structural characterization of AlxGa 1 _ xAs layers grown in a metallic arsenic-based-MOCVD system. The gallium and aluminium precursors were the metal-organic compounds trimethylgallium (TMGa) and trimethylaluminium (TMAI), respectively. AlxGa 1 _xAs layers that were grown at temperatures less than 750 'C present a high electr ical resistivity. Independent of the used lll /V ratio the samples that were grown at temperatures greater that 750 •c were n-type with an electron concentration of around 1017 cm -3 and a carrier mobility of 2200 cm2 JV-s. Chemical composi tion studies by SIMS exhibit the prese nce of silicon, carbon and oxygen as the main residual impurities. Sil icon concentration of around of 1017 em 3 is very close to the free carrier concentration determined by the Hall-van de r Pauw measurements. Composition homogeneity and structura l quality are demon strated by Raman measurements. As the growth temperature is increased th e layers compen sation decreases but the Raman spectra show that the crystalline quality of the layers diminishes. | es |
dc.description.sponsorship | Instituto Politécnico Nacional CIBA-TLAXCLA | es |
dc.language.iso | en | es |
dc.subject | MOCVD Ha ll Effect SIMS Raman scactering 111-V semiconductor growth GaAs | es |
dc.title | Characterization of AlxGa1_xAs layers grown on (100) GaAs by Inetallic-arsenic-based-MOCVD | es |
dc.type | Article | es |
dc.description.especialidad | Medico-Biológicas | es |
dc.description.tipo | es | |
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