Photothermal chacaterization of electrochemical etching porous silicon

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Campo DC	Valor	Lengua/Idioma
dc.creator	Calderon, A.	-
dc.creator	Alvarado Gil, J. J.	-
dc.creator	Gurevich, Yuri G.	-
dc.creator	Cruz Orea, A.	-
dc.creator	Delgadillo, I.	-
dc.creator	Vargas, H.	-
dc.creator	Miranda, L. C. M.	-
dc.date	2012-03-25T07:31:50Z	-
dc.date	2012-03-25T07:31:50Z	-
dc.date	1997-12	-
dc.date.accessioned	2013-01-16T10:10:26Z	-
dc.date.available	2013-01-16T10:10:26Z	-
dc.date.issued	2013-01-16	-
dc.identifier	0031-9007	-
dc.identifier	http://hdl.handle.net/123456789/321	-
dc.identifier.uri	http://www.repositoriodigital.ipn.mx/handle/123456789/10814	-
dc.description	The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a funtion of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analized using a composite two layer model. The results obtained strongly support the existing studies indicating the presence of a hogh percentaje of SiO2 in the composition of porous silicon material.	-
dc.description	Research article of journal indexed in ISI database	-
dc.description	Instituto Politecnico Nacional and CONACYT-Mexico	-
dc.language	en	-
dc.publisher	Physical Review Letters	-
dc.subject	Porous silicon	-
dc.subject	Photothermal characterization	-
dc.title	Photothermal chacaterization of electrochemical etching porous silicon	-
dc.type	Article	-
Aparece en las colecciones:	Doctorado

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1997 PRL v79 n25 p5022.pdf		218.42 kB	Adobe PDF	Visualizar/Abrir

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